Samsung Electronics and Advanced Micro Devices (AMD) have expanded their collaboration on next-generation AI memory and computing technologies by signing a memorandum of understanding (MoU) to increase memory chip supplies for AI infrastructure, Samsung confirmed on March 18.
The signing ceremony took place at Samsung’s chip manufacturing complex in Pyeongtaek, Korea, with Dr Lisa Su, Chair and CEO of AMD, and Young Hyun Jun, Vice Chairman and CEO of Samsung Electronics, in attendance. The collaboration will focus on supplying Samsung’s next-generation high-bandwidth memory (HBM4) for AMD’s upcoming Instinct MI455X AI accelerators, as well as optimized DDR5 memory for its sixth-generation EPYC processors.
Jun stated, “From industry-leading HBM4 and next-generation memory architectures to cutting-edge foundry and advanced packaging, Samsung is uniquely positioned to deliver unrivalled turnkey capabilities that support AMD’s evolving AI roadmap.” Samsung is already a primary supplier of HBM for AMD, providing HBM3E chips for AMD’s MI350X and MI355X accelerators.
The partnership aims to power next-generation AI systems combining AMD Instinct GPUs, AMD EPYC CPUs, and rack-scale architectures such as the AMD Helios platform. Samsung’s HBM4, fabricated with a 6th-gen 10nm-class DRAM process and a 4nm logic base die, delivers speeds up to 13 Gbps and bandwidth up to 3.3 TB/s. Samsung noted that the AMD Instinct MI455X GPU, paired with HBM4 memory, is expected to be the optimum solution for high-performance AI model training and inference. Additionally, AMD benefits from a more diversified supply chain.
The companies are also exploring a foundry partnership, with Samsung potentially manufacturing AMD’s future chips. This announcement comes amid GTC 2026, where Nvidia CEO Jensen Huang also announced a foundry partnership with Samsung Korea and praised HBM4 chips for AI performance. Such strategic collaborations further strengthen Samsung’s position as a leader in high-bandwidth memory technologies.
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